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ID 33937
file
creator
Du, Baoli
Saiga, Yuta
Kajisa, Kousuke
NDC
Physics
abstract
We have grown single-crystalline samples of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 with n-type carriers by Sn-flux method. The actual compositions of the single crystals were found to be described as Ba8Ga15.8-2yZnySn30.2+y (y = 0 ∼ 0.54), where the charge balance is well maintained. As y goes from 0 to 0.42, the resistivity at 300 K decreases from 5.3 to 3.0 mΩ cm gradually, but the effective mass is essentially constant at 1.2 ∼ 1.5m0, indicating intact band structure near the conduction band minima upon Zn substitution for Ga. At elevated temperatures, the ambipolar effect on the thermal conductivity becomes less pronounced upon Zn doping, and the dimensionless figure of merit ZT for y = 0.07 and 0.42 remains at rather high values compared with the nondoped sample.
journal title
Journal of Applied Physics
volume
Volume 111
issue
Issue 1
start page
013707
date of issued
2012
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
(c) 2012 American Institute of Physics
relation url
department
Graduate School of Advanced Sciences of Matter



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