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ID 30397
file
creator
Kono, Yasushi
Ohya, Nobuyuki
Taguchi, Takashi
Yamamoto, Setsuo
Akai, Koji
NDC
Physics
abstract
We calculated the electronic structures and the thermoelectric properties for type-I and type-VIII Ba8Ga16Sn30 (BGS) clathrates. The band structures show that type-I and type-VIII BGS are indirect semiconductors with band gaps of 0.51 eV and 0.32 eV, respectively. The calculated Seebeck coefficient of n-type type-I BGS is higher than that of n-type type-VIII BGS because of the larger density of states in type-I at the bottom of the conduction band. This is in good agreement with the experimental results. We also calculated the electrical conductivity and thermal conductivity due to charge carriers. Estimated thermoelectric figure of merit, ZT, exceeds 1.0 for both types.
journal title
Journal of Applied Physics
volume
Volume 107
issue
Issue 12
start page
123720-1
end page
123720-6
date of issued
2010
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2010 American Institute of Physics
relation url
department
Graduate School of Advanced Sciences of Matter



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