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ID 18596
file
creator
Yoshimoto, Takashi
Kidera, Toshiro
Obata, Katsunori
Sunami, Hideo
Hirose, Masataka
abstract
An extremely thin (~0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved, as confirmed by capacitance–voltage, gate-current–gate-voltage, and time-dependent dielectricbreakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform silicon-nitride layer with atomic-scale control.
journal title
Applied Physics Letters
volume
Volume 77
issue
Issue 18
start page
2855
end page
2857
date of issued
2000-10-30
publisher
American Institute of Physics
issn
0003-6951
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2000 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems



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