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ID 15051
file
creator
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
subject
Dynamic stress
Negative bias temperature instability (NBTI)
pMOSFETs
Recombination
Ultrathin gate oxide
NDC
Electrical engineering
abstract
Negative bias temperature (NBT) instability of p-MOSFETs with ultrathin SiON gate dielectric has been investigated under various gate bias configurations. The NBT-induced interface trap density (ΔNit) under unipolar bias is essentially lower than that under static bias, and is almost independent of the stress frequency up to 10 MHz. On the contrary, ΔNit under bipolar pulsed bias of frequency larger than about 10 kHz is significantly enhanced and exhibits a strong frequency dependence, which has faster generation rate and smaller activation energy as compared to other stress configurations. The degradation enhancement is attributed to the energy to be contributed by the recombination of trapped electrons and free holes upon the silicon surface potential reversal from accumulation to inversion.
journal title
IEEE Electron Device Letters
volume
Volume 26
issue
Issue 6
start page
387
end page
389
date of issued
2005-06
issn
0741-3106
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
relation url
department
Research Center for Nanodevices and Systems



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