Electronic structure of Kondo lattice compounds YbNi3X9 (X = Al, Ga) studied by hard x-ray spectroscopy
Physical Review B 86 巻 11 号
115114- 頁
2012 発行
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PhysRevB.86.115114.pdf
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全文
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タイトル ( eng ) |
Electronic structure of Kondo lattice compounds YbNi3X9 (X = Al, Ga) studied by hard x-ray spectroscopy
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作成者 |
Utsumi Yuki
Ohara Shigeo
Yamashita Tetsuro
Mimura Kojiro
Motonami Satoru
Ueda Shigenori
Kobayashi Keisuke
Yamaoka Hitoshi
Tsujii Naohito
Hiraoka Nozomu
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収録物名 |
Physical Review B
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巻 | 86 |
号 | 11 |
開始ページ | 115114 |
抄録 |
We have performed hard x-ray photoemission spectroscopy (HAXPES) for Yb-based Kondo lattice compounds; an antiferromagnetic heavy-fermion system YbNi3Al9 and a valence fluctuation system YbNi3Ga9. The Yb 3d5/2 spectra of YbNi3Ga9 showed both Yb2+ and Yb3+-derived structures indicating strong valence fluctuation, and the intensity of Yb2+ (Yb3+) structures gradually increased (decreased) on cooling. The Yb 3d5/2 spectra of YbNi3Al9 mostly consisted of Yb3+-derived structures and showed little temperature dependence. The Yb valences of YbNi3Ga9 and YbNi3Al9 at 22 K were evaluated to be 2.43 and 2.97, respectively. Based on the results of the Ni 2p and valence-band HAXPES spectra together with soft x-ray valence-band spectra, we described that the difference of physical properties of YbNi3X9 (X= Al, Ga) is derived from the differences of the 4f-hole level relative to the Fermi level (EF) and Ni 3d density of states at EF. The HAXPES results on the Yb valences were consistent with those obtained by x-ray absorption spectroscopy using the partial fluorescence yield mode and resonant x-ray emission spectroscopy at the Yb L3 edge.
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NDC分類 |
物理学 [ 420 ]
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言語 |
英語
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資源タイプ | 学術雑誌論文 |
出版者 |
American Physical Society
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発行日 | 2012 |
権利情報 |
(c) 2012 American Physical Society
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出版タイプ | Version of Record(出版社版。早期公開を含む) |
アクセス権 | オープンアクセス |
収録物識別子 |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.86.115114
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.86.115114
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