Electronic structure of YbGa1.15Si0.85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies

Physical Review B 83 巻 10 号 104525-1-104525-10 頁 2011-03-31 発行
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タイトル ( eng )
Electronic structure of YbGa1.15Si0.85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies
作成者
Yamaoka Hitoshi
Jarrige Ignace
Tsujii Naohito
Imai Motoharu
Lin Jung-Fu
Matsunami Masaharu
Eguchi Ritsuko
Arita Masashi
Taguchi Munetaka
Senba Yasunori
Ohashi Haruhiko
Hiraoka Nozomu
Ishii Hirofumi
Tsuei Ku-Ding
収録物名
Physical Review B
83
10
開始ページ 104525-1
終了ページ 104525-10
抄録
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_<1.15>Si_<0.85> and nonsuperconducting ternary germanide YbGa_xGe_<2-x> (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa_<1.15>Si_<0.85> no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb^<2+> state partially including itinerant electrons to the localized Yb^<3+> state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_<1.15>Si_<0.85> and YbGa_xGe_<2-x>, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_<1.15>Si_<0.85> and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
NDC分類
物理学 [ 420 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
The American Physical Society
発行日 2011-03-31
権利情報
Copyright (c) 2011 The American Physical Society
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.83.104525
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.83.104525