Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study

Physical Review B - Condensed Matter and Materials Physics 54 巻 9 号 6062-6064 頁 1996-09-01 発行
アクセス数 : 758
ダウンロード数 : 168

今月のアクセス数 : 2
今月のダウンロード数 : 5
ファイル情報(添付)
PhysRevB_54_6062.pdf 61.5 KB 種類 : 全文
タイトル ( eng )
Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
作成者
Nakamura Ko-ichi
Kitaoka Yoshio
Asayama Kunisuke
Nakamoto Go
Fujii Hironobu
収録物名
Physical Review B - Condensed Matter and Materials Physics
54
9
開始ページ 6062
終了ページ 6064
抄録
The magnetic field dependence of the spin-lattice relaxation rate 1/T1 of 119Sn in CeNiSn has been measured down to 20 mK in a field range of 0.2-8 T. (T1T)-1 is constant below 1 K, which depends on the external field in such a manner that its value stays constant to 2 T, while it increases linearly with the field up to 8 T. It is shown that this magnetic field dependence of (T1T)-1 is well explained by the simple scenario that the quasiparticle density of states at the Fermi level is produced by the Zeeman splitting of the up- and down-spin bands, keeping its V-shaped gapped structure unchanged for fields less than 8 T. The present experiment has elucidated that CeNiSn is in a semimetallic ground state with a low carrier density and the application of a magnetic field exceeding 2 T turns out to supply effective carriers.
言語
英語
資源タイプ 学術雑誌論文
出版者
American Physical Society
発行日 1996-09-01
権利情報
Copyright (c) 1996 The American Physical Society.
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.54.6062
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.68.054416