Orbital-Assisted Metal-Insulator Transition in VO2
Physical Review Letters 95 巻 19 号
2005-11-04 発行
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| ファイル情報(添付) | |
| タイトル ( eng ) |
Orbital-Assisted Metal-Insulator Transition in VO2
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| 作成者 |
Haverkort M.W.
Hu Z.
Reichelt W.
Streltsov S.V.
Korotin M.A.
Anisimov V.I.
Hsieh H.H.
Lin H.-J.
Chen C.T.
Khomskii D.I.
Tjeng L.H.
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| 収録物名 |
Physical Review Letters
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| 巻 | 95 |
| 号 | 19 |
| 抄録 |
We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.
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| 言語 |
英語
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| 資源タイプ | 学術雑誌論文 |
| 出版者 |
American Physical Society
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| 発行日 | 2005-11-04 |
| 権利情報 |
Copyright (c) 2005 American Physical Society.
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| 出版タイプ | Version of Record（出版社版。早期公開を含む） |
| アクセス権 | オープンアクセス |
| 収録物識別子 |
[ISSN] 0031-9007
[DOI] 10.1103/PhysRevLett.95.196404
[NCID] AA00773679
[DOI] http://dx.doi.org/10.1103/PhysRevLett.95.196404
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